Structural and electronic properties of manganese-doped Bi2Te3epitaxial layers
نویسندگان
چکیده
منابع مشابه
investigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولStructural and electronic properties of Eu- and Pd-doped ZnO
Doping ZnO with rare earth and 4d transition elements is a popular technique to manipulate the optical properties of ZnO systems. These systems may also possess intrinsic ferromagnetism due to their magnetic moment borne on 4f and 4d electrons. In this work, the structural, electronic, and magnetic properties of Eu- and Pd-doped ZnO were investigated by the ab initio density functional theory m...
متن کاملElectronic and structural properties of alkali doped SWNT
Comprehensive experiments on structural and transport properties of alkali intercalated single walled carbon nanotubes (SWNT) are presented. The increasing electron density was measured as a shift of the Drude-edge in optical reflectivity in-situ with progressive doping. In saturation-doped samples the Drude-edge shifts into the visible (to 25,000 30,000 cm— 1 for potassium and rubidium doped s...
متن کاملSynthesis and structural properties of Mn-doped ZnO/Graphene nanocomposite
Zinc oxide (ZnO) is a promising metal oxide semiconductor with various applications, especially in the photocatalytic destruction of environmental pollutants. However, this nanoparticle has some limitations, such as poor dispersion, aggregation, and a wide energy gap. As such, the doping of metal oxide semiconductor has been strongly recommended. Addition of manganese (Mn) has proven effective ...
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ژورنال
عنوان ژورنال: New Journal of Physics
سال: 2015
ISSN: 1367-2630
DOI: 10.1088/1367-2630/17/1/013028